Abstract
A method for measuring subcell capacitance voltage (C-V) in a multijunction solar cell is introduced. The subcell of interest is illuminated by a monochromatic light pulse with a ns rise time. The subcell capacitance is calculated from the measured rise time of the solar cell voltage. The effect of optical coupling is eliminated by introducing a high intensity bias illumination to all subcells below the one measured. The method is verified by comparing the subcell capacitance obtained from four junction solar cells with the results from corresponding component cells, which can be measured using well-established methods. From the C-V curves, the built-in voltage and the base layer doping density for each subcell are calculated.