Abstract
Organic thin film light sensors are promising devices for X-ray imaging systems. Compared to crystalline silicon photodiodes (c-Si), organic sensors can be fabricated on large active area at low cost. Furthermore, organic semiconductors have the advantage of low X-ray absorption. Here, we show that despite the high diode capacitance of several nF/cm, a single X-ray pulse detection as low as ∼14 μGy can be detected in the ms regime. Such device properties match industrial requirements for X-ray sensing. © 2013 IEEE.