Abstract
We report investigations of the electronic transport properties carried out by means of the Hall technique for indium-tin-oxide thin films on glass after a variety of surface treatments. We find that oxygen-plasma treatments induce a significant increase in the carrier concentration, and a less significant decrease of mobilities with respect to "as-received" or aquaregia treated substrates. We consider that this is indicative of an increased concentration of defects, as a result of the plasma exposure. (C) 1999 American Institute of Physics. [S0003-6951(99)04827-5].