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Generation-recombination noise of hot carriers in semiconductors
Journal article   Peer reviewed

Generation-recombination noise of hot carriers in semiconductors

L Reggiani and Paolo Lugli
Hot Carriers in Semiconductors: Proceedings of the Fifth International Conference, 20-24 July 1987, Boston, MA, USA, Vol.31(3-4), pp.543-546
31
1988
DOI: https://doi.org/10.1016/0038-1101(88)90337-1
Handle:
https://hdl.handle.net/10863/5627

Abstract

Sensors
We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance of a cross-correlation contribution coming from velocity and number fluctuations.
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http://www.sciencedirect.com/science/article/pii/0038110188903371View

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