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Enhanced coherent Zener tunneling in indirect gap semiconductors
Journal article   Peer reviewed

Enhanced coherent Zener tunneling in indirect gap semiconductors

A Di Carlo, Paolo Lugli, A Kavokin, M Vladimirova and P Vogl
physica status solidi (b), Vol.204(1), pp.420-422
204
01/11/1997
DOI: https://doi.org/10.1002/1521-3951(199711)204:1<420::AID-PSSB420>3.0.CO;2-I
Handle:
https://hdl.handle.net/10863/9971

Abstract

Sensors
We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. We are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. Evidence of such phenomena have also been obtained in the absorption coefficient for a band gap modulated PIN diode. A realistic example is presented for SiGe-modulated diodes.
url
http://onlinelibrary.wiley.com/doi/10.1002/1521-3951(199711)204:1<420::AID-PSSB420>3.0.CO;2-I/fullView

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