Enhanced Zener tunneling in silicon

A Di Carlo; Paolo Lugli; P Vogl

doi:10.1016/S0038-1098(96)00756-9

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Journal article

Peer reviewed

Enhanced Zener tunneling in silicon

A Di Carlo, Paolo Lugli and P Vogl

Solid State Communications, Vol.101(12), pp.921-923

101

01/03/1997

DOI: https://doi.org/10.1016/S0038-1098(96)00756-9

Handle:

https://hdl.handle.net/10863/9980

Abstract

Sensors

We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. Even though Zener tunneling is essentially a k-conserving process, we are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. A realistic example is presented for SiGe-modulated diodes. (C) 1997 Elsevier Science Ltd. All rights reserved.

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Details

Title: Enhanced Zener tunneling in silicon
Creators: A Di Carlo
Paolo Lugli
P Vogl
Publication Details: Solid State Communications, Vol.101(12), pp.921-923
ISSN: 0038-1098
EISSN: 1879-2766
Series / Volume: 101
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Number of pages: 3
Identifiers: (UNIBZ)22657134
991005773645001241
Web of Science ID: A1997WL30000011
Scopus ID: 2-s2.0-0031098647
Academic Unit: Faculty of Science and Technology
Language: English
Resource Type: Journal article
Author Names String: Di Carlo A, Lugli P, Vogl P

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