Abstract
In this work, we studied the impact of stair-case gate bias stress on flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors and we estimated the breakdown voltage for different channel aspect ratios. The results show that the breakdown voltage exhibits a remarkable dependence on the channel width, while exposing no or marginal dependence on the channel length. The analysis of the threshold voltage evolution shows that after an initial increase, a remarkable decrease occurs for larger bias, indicating the action of at least two charge trapping phenomena.