Abstract
Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at room temperature and subsequently annealed in vacuum in the temperature interval from 100 to 900 degreesC. The aim of the experiment was to determine the conditions for bubble formation within the solid film, which may have important technological application. Defects produced in such samples were studied by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR) spectroscopy. It is shown that high dose hydrogen implantation produces vacancy-related and silicon selfinterstitial clusters. The latter are thought to be responsible for the formation of the weak displacement field. The annealing at higher temperatures creates multivacancy-related clusters responsible for the strong displacement field formation. (C) 2002 Elsevier Science B.V. All rights reserved.