Trapping effects in organic thin film transistors

C Erlen; F Brunetti; Paolo Lugli; M Fiebig; S Schiefer; B Nickel

doi:10.1109/NANO.2006.247572

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Trapping effects in organic thin film transistors

Conference proceeding

Peer reviewed

Trapping effects in organic thin film transistors

C Erlen, F Brunetti, Paolo Lugli, M Fiebig, S Schiefer and B Nickel

2006 Sixth IEEE Conference on Nanotechnology: Westin Hotel, Cincinnati, Ohio, USA, 17-20 July 2006, Vol.6, pp.82-85

6th IEEE Conference on Nanotechnology (IEEE-NANO 2006) (Cincinnati, Ohio, 17/07/2006 - 20/07/2006)

2006

DOI: https://doi.org/10.1109/NANO.2006.247572

Handle:

https://hdl.handle.net/10863/9729

Abstract

OTFT

Capture cross-section

Hysteresis

Traps

Pentacene

Simulation

Sensors

We report the fabrication of pentacene thin film transistors with a mobility of 2.17 cm/Vs which is challenging amorphous silicon. Next to device mobility, large hysteresis in the IV characteristics has been an obstacle for the design of large organic circuits in the past. It is a key success factor for optimization and widespread application of organic devices to understand the underlying principles. For the first time, we demonstrate that the observed hysteresis can fully be described by transient trap charging effects. Using the commercial finite element environment ISE TCAD, transient device behavior is simulated and compared to our experimental results. Values for density and energy of acceptor-type traps at the pentacene/SiO interface are extracted. Furthermore, we are able to determine the associated hole capture cross-section which has never been quantified before. To additionally emphasize the influence of trapping effects, it is outlined that transient measurement sweeps can systematically lead to misinterpreted mobilities if traps are not taken into account. © 2006 IEEE.

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http://ieeexplore.ieee.org/document/1717022/View

Details

Title: Trapping effects in organic thin film transistors
Creators: C Erlen
F Brunetti
Paolo Lugli
M Fiebig
S Schiefer
B Nickel
Publication Details: 2006 Sixth IEEE Conference on Nanotechnology: Westin Hotel, Cincinnati, Ohio, USA, 17-20 July 2006, Vol.6, pp.82-85
Editor(s): IEEE
ISBN: 978-142440078-2
Conference: 6th IEEE Conference on Nanotechnology (IEEE-NANO 2006) (Cincinnati, Ohio, 17/07/2006 - 20/07/2006)
Series / Volume: 6
Publisher: IEEE Operations Center
Piscataway, NJ
Identifiers: 978-142440078-2
(UNIBZ)22608515
991005772656301241
Scopus ID: 2-s2.0-42549131420
Academic Unit: Faculty of Science and Technology
Language: English
Resource Type: Conference proceeding
Author Names String: Erlen C, Brunetti F, Lugli P, Fiebig M, Schiefer S, Nickel B
Additional Description: srcEditors: IEEE

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