Abstract
The polymer thin-film memristors were fabricated by means of a simple and low-cost spray coating printing technique, and later characterized. The realized polymer-based memristors present a sandwich structure composed of an indium tin oxide (ITO) bottom electrode, a biocompatible polymeric resistive layer consist of poly(3,4 ethyldioxythio-phene)poly(styrenesulfunate) (PEDOT:PSS) and poly(vinyl alcohol) (PVA), and a gold top electrode. Atomic force microscopy was used to perform topographical analysis of the spray-coated resistive layer. Current-voltage (I-V) curves were used to demonstrate typical resistance switching behaviour characterized by loop hysteresis. The memristor mechanism is attributed to the space-charge-limited conduction (SCLC) model, investigated by fittings of the I-V curves. The developed thin-film organic memristors show promise in offering a strategy for developing low-cost building blocks of polymer neuromorphic circuits and memristive biosensors applications.