Abstract
We report a straightforward process to fabricate carbon nanotube field-effect transistors based on random nanotube networks. This solution-based approach is simple, fast and reliable, which can be applied to printed electronics. We also investigated the transistor performance as a function of nanotube density, content of metallic nanotubes, and channel geometry. Our experiments show that increase of nanotube density results in consistent improvement of carrier mobility, until a threshold density is achieved. Finally, a simple percolation model based on the Monte Carlo method has been developed for simulating the electrical characteristics of the devices. The model offers a basis for further optimization of carbon nanotube network devices. © 2011 IEEE.