Abstract
Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to fabricate nm-scale diodes over extensive areas. Using a temperature-enhanced process, several millions of diodes were transfer-printed in one single step. We show the reliable transfer of functioning MIM diodes, which were electrically characterized by conductive Atomic Force Microscopy (c-AFM) measurements. Quantum-mechanical tunneling was determined to be the main conduction mechanism across the metal-oxide-metal junction.