Abstract
Recently, several molecular devices have been realized with interesting properties like conductance, switching, gate modulation and negative differential resistance. In this paper we present a new modular framework based on VHDL-AMS that allows a comparison among different Molecular-FET models in terms of capability to capture an accurate I-V characteristics. It also allows to analyze the impact of Molecular-FET and to inspect the circuit proper behavior and its possible use in an architecture organized as a cascade of basic crossbars. This comparison exhibits technological choices, capability of different models features to capture physical quantities and models computational efforts.