Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil

Luisa Petti; P Aguirre; Niko Stephan Münzenrieder; G Salvatore; C Zysset; A Furtiger; L Büthe; C Vogt; G Tröster

doi:10.1109/IEDM.2013.6724609

Back

Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil

Conference proceeding

Peer reviewed

Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil

Luisa Petti, P Aguirre, Niko Stephan Münzenrieder, G Salvatore, C Zysset, A Furtiger, L Büthe, C Vogt and G Tröster

2013 IEEE International Electron Devices Meeting (IEDM 2013): Washington, DC, USA, 9 - 11 December 2013, pp.11.4.1-11.4.4

2013 IEEE International Electron Devices Meeting (IEDM 2013) (Washington, 09/12/2013 - 11/12/2013)

2013

DOI: https://doi.org/10.1109/IEDM.2013.6724609

Handle:

https://hdl.handle.net/10863/11531

Abstract

We report the first mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) vertical thin-film transistors (VTFTs) with 500 nm channel length, fabricated on a freestanding plastic foil, using a low temperature process <;150°C. The VTFTs exhibit a well-shaped transfer characteristic, with an on/off current ratio >10 7 and a threshold voltage of 2.2 V. We demonstrate full device functionality down to 5 mm bending radius, even after 1000 bending cycles. These results proof that VTFTs are feasible for realizing compact and bendable electronic systems.

Files and links (1)

url

https://ieeexplore.ieee.org/abstract/document/6724609View

Details

Title: Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil
Creators: Luisa Petti
P Aguirre
Niko Stephan Münzenrieder
G Salvatore
C Zysset
A Furtiger
L Büthe
C Vogt
G Tröster
Publication Details: 2013 IEEE International Electron Devices Meeting (IEDM 2013): Washington, DC, USA, 9 - 11 December 2013, pp.11.4.1-11.4.4
Editor(s): IEEE
ISBN: 978-1-4799-3726-4
EISBN: 978-1-4799-2307-6
Conference: 2013 IEEE International Electron Devices Meeting (IEDM 2013) (Washington, 09/12/2013 - 11/12/2013)
Publisher: IEEE
Piscataway, NJ
Identifiers: 978-1-4799-3726-4
(UNIBZ)30835913
991005772789201241
Web of Science ID: 000346509500072
Scopus ID: 2-s2.0-84894329791
Academic Unit: Faculty of Science and Technology
Faculty of Science and Technology
Language: English
Resource Type: Conference proceeding
Author Names String: Petti L, Aguirre P, Münzenrieder N, Salvatore G, Zysset C, Furtiger A, Büthe L, Vogt C, Tröster G
Additional Description: srcEditors: IEEE

Metrics

32 Record Views