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Low temperature rectifying junctions for crossbar non-volatile memory devices
Conference proceeding   Peer reviewed

Low temperature rectifying junctions for crossbar non-volatile memory devices

G Tallarida, N Huby, B Kutrzeba-Kotowska, S Spiga, M Arcari, G Csaba, Paolo Lugli, A Redaelli and R Bez
2009 IEEE International Memory Workshop, IMW '09: Monterey, California, USA, 10 - 14 May 2009
2009 IEEE International Memory Workshop (IMW 2009) (Monterey, CA, 10/05/2009 - 14/05/2009)
2009
DOI: https://doi.org/10.1109/IMW.2009.5090598
Handle:
https://hdl.handle.net/10863/9589

Abstract

Crossbar memory devices NiO Resistive switching materials Schottky junctions ZnO Sensors
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10 and forward current density as high as 10 A/cm are reported. Results of the integration with NiO based switching memory elements are also shown. ©2009 IEEE.
url
http://ieeexplore.ieee.org/abstract/document/5090598/View

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