Abstract
We report the integration of solution-processed high-purity semiconducting (7,5) single walled carbon nanotubes (SWCNTs) with metal oxides for the fabrication of high-performance CMOS inverters on free-standing plastic foils. Flexible inverters based on spin-coated SWCNTs and sputtered amorphous InGaZnO (IGZO) exhibit gains up to 85 V/V, even while bent to a tensile radius of 1 cm. To our knowledge, this is the highest gain ever reported for flexible and strained hybrid inverters, supplied at V DD ≤10 V. We also realize flexible inverters based on fully solution-deposited SWCNTs and InO x semiconductors.