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Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation
Conference proceeding   Peer reviewed

Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation

B Deveaud, J Shah, TC Damen, AC Gossard and Paolo Lugli
Hot Carriers in Semiconductors: Proceedings of the Fifth International Conference, 20–24 July 1987, Boston, MA, U.S.A., pp.435-438
5th International Conference on Hot Carriers in Semiconductors (HCIS-5) (Boston, MA, 20/07/1987 - 24/07/1987)
1988
DOI: https://doi.org/10.1016/B978-0-08-036237-3.50033-4
Handle:
https://hdl.handle.net/10863/3959

Abstract

Sensors
After excitation by a subpicosecond pulse, we observe a very slow rise of the luminescence both in GaAs and in GaAs quantum wells. By comparing the results in GaAs and InP, we show that the slow rise in GaAs and GaAs quantum wells is due to the slow return of the electrons from the L to the ┌ valley. Our results show the importance of electron-electron scattering and the inadequacy of a simple phonon cascade model at densities as low as 5×1016cm-3
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http://www.sciencedirect.com/science/article/pii/B9780080362373500334View

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