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Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
Conference proceeding   Peer reviewed

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

A Bonfiglio, M Lomascolo, G Traetta, R Cingolani, A Di Carlo, F Della Sala, Paolo Lugli, A Botchkarev and H Morkoc
MRS Proceedings, Vol.595
595
Symposium on GaN and Related Alloys Held at the MRS Fall Meeting (Boston, MA, 29/11/1999 - 03/12/1999)
1999
Handle:
https://hdl.handle.net/10863/9955

Abstract

Sensors
The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.
url
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/div-classtitleinfluence-of-internal-electric-fields-on-the-ground-level-emission-of-ganalgan-multi-quantum-wellsdiv/49C6A284685083CC229593DDF8070959View

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