Abstract
We report the first In-Ga-Zn-O source-gated transistors on a flexible polyimide film. Our findings show that using Au contacts and the incorporation of an ultrathin SiO 2 tunnel layer facilitate contact-controlled operation, distinct from conventional thin-film transistors with Ti contacts. This was confirmed by early saturation in the output characteristics and the very low saturation voltage change over a gate voltage change of < 0.1 V/V which agrees well with the theoretical saturation coefficient of ≈ 0.1.