Abstract
This work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing structures realized by focused ion (FIB) techniques. The electrically measured hysteresis loop is in good agreement with SQUID measured hysteresis curves of identical layer stacks. Full reversal in a perpendicular field causes an approximately 0.1 percent change in the Hall-resistivity of the film. We argue that this sensor is scalable all the way down to probe single domain Co/Pt dots with lateral dimensions of 200 nm·200 nm. © 2008 IEEE.