Abstract
Nano antenna arrays are excellent devices for infrared detection (terahertz radiation). We present our latest results on the production of nano antennas fabricated in a nano transfer printing process. The molecular beam epitaxy (MBE) technique allows the growth of AlGaAs/GaAs-stamps which are used to fabricate nano antennas with a high aspect ratio of 10 . Additionally, Si-stamps have been manufactured via electron-beam lithography in order to produce dense arrays of over 10 million dipole nano antennas. These dipole antennas have a width of 60 nm and can be trimmed to any length to be sensitive for a desired wavelength in the infrared regime. For rectifying THz radiation, metal-oxide-metal (MOM) tunneling diodes have been printed having an ultrathin dielectric. The transfer yield is almost hundred per cent and electrical measurements of direct and Fowler-Nordheim tunneling confirms the reliability of the printed diodes. A concept of implementing MBE-fabricated MOM diodes having spatial dimensions in the nanometer range in nano antenna arrays is demonstrated. © 2011 IEEE.