Abstract
This paper presents the optimization of electronic circuitry for operation in the harsh electro magnetic (EM) environment during a magnetic resonance imaging (MRI) scan. As demonstrator, a device small enough to be worn during the scan is optimized. Based on finite element method (FEM) simulations, the induced current densities due to magnetic field changes of 200 T s(-1) were reduced from 1 x 10(10) A m(-2) by one order of magnitude, predicting error-free operation of the 1.8 V logic employed. The simulations were validated using a bit error rate test, which showed no bit errors during a MRI scan sequence. Therefore, neither the logic, nor the utilized 800 Mbit s(-1) low voltage differential swing (LVDS) data link of the optimized wearable device were significantly influenced by the EM interference. Next, the influence of ferro-magnetic components on the static magnetic field and consequently the image quality was simulated showing a MRI image loss with approximately 2 cm radius around a commercial integrated circuit of 1 x 1 cm(2). This was successively validated by a conventional MRI scan.