Characterizing magnetic field-coupled computing devices by the Extraordinary Hall-effect

M Becherer; J Kiermaier; G Csaba; J Rezgani; C Yilmaz; P Osswald; Paolo Lugli; D Schmitt-Landsiede

doi:10.1109/ESSDERC.2009.5331551

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Characterizing magnetic field-coupled computing devices by the Extraordinary Hall-effect

Conference proceeding

Peer reviewed

Characterizing magnetic field-coupled computing devices by the Extraordinary Hall-effect

M Becherer, J Kiermaier, G Csaba, J Rezgani, C Yilmaz, P Osswald, Paolo Lugli and D Schmitt-Landsiede

2009 proceedings of the European Solid State Device Research Conference (ESSDERC 2009): 14 - 17 Sept. 2009, pp.105-108

39th European Solid-State Device Research Conference (ESSDERC 2009) (Athens, 14/09/2009 - 18/09/2009)

2009

DOI: https://doi.org/10.1109/ESSDERC.2009.5331551

Handle:

https://hdl.handle.net/10863/9544

Abstract

Sensors

A submicron sized Extraordinary Hall-effect (EHE) sensor for read-out of field-coupled computing devices is presented. The applied sensing structure is suitable to electrically probe the output states of field-coupled magnetic logic gates. Furthermore it reveals details on the magnetic properties of submicron-scale single-domain dots. A 'split-current' architecture is chosen, where Hall-sensing takes place in a single lateral direction, in order to keep field-coupling to adjacent nanomagnets undisturbed. By focused ion beam (FIB) irradiation, the magnetic properties of Co/Pt muItilayers are tailored to define both the switching field and the geometry of nanomagnetic dots. From angular measurements we conclude, that the reversal mechanism of the FIB patterned magnetic dots remains to be domain-wall driven. The sensor is a main component needed for integration of nanomagnetic computing units embedded into microelectronic systems. ©2009 IEEE.

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Details

Title: Characterizing magnetic field-coupled computing devices by the Extraordinary Hall-effect
Creators: M Becherer
J Kiermaier
G Csaba
J Rezgani
C Yilmaz
P Osswald
Paolo Lugli
D Schmitt-Landsiede
Publication Details: 2009 proceedings of the European Solid State Device Research Conference (ESSDERC 2009): 14 - 17 Sept. 2009, pp.105-108
Editor(s): Tsoukalas D
ISBN: 978-1-4244-4352-9
EISBN: 978-1-4244- 4353-6
Conference: 39th European Solid-State Device Research Conference (ESSDERC 2009) (Athens, 14/09/2009 - 18/09/2009)
Publisher: IEEE
Piscataway, NJ
Identifiers: 978-1-4244-4352-9
(UNIBZ)22563417
991005773432401241
Scopus ID: 2-s2.0-72949088254
Academic Unit: Faculty of Science and Technology
Language: English
Resource Type: Conference proceeding
Author Names String: Becherer M, Kiermaier J, Csaba G, Rezgani J, Yilmaz C, Osswald P, Lugli P, Schmitt-Landsiede D
Additional Description: srcEditors: Tsoukalas D

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