Abstract
We report on a novel fabrication scheme to define metal source and drain contacts for short-channel thin-film transistors utilizing a purely additive transfer-printing process. We demonstrate the viability of this approach by realizing carbon nanotube thin-film transistors featuring a very thin aluminum oxide gate dielectric The active layer of the transistors is spray-deposited from an aqueous carbon-nanotube suspension with 90% semiconducting content. Full gate control is demonstrated for gate-source voltages below 2.0 V. © 2015 IEEE.