Abstract
The conventional fabrication method in semiconductor technology or nanoelectronics is electron beam lithography. We present a new fabrication method that enables the fabrication of high amount microscale and nanoscale devices on various substrates, namely, nanotransfer printing. Using this technique, we produced millions of nanoscale metal-insulator-metal diodes which represent rectifying devices in the terahertz regime and thousands of antenna structures that are sensitive in the wavelength regime of infrared light. The combination of this two (opto)electronic devices forms a rectenna that converts absorbed infrared light into a DC current. With our approach, the fabrication of large arrays of rectennas is possible which leads to applications in the field of infrared detectors or energy harvesting.