HEMT models and simulations

Paolo Lugli; M Paciotti; E Calleja; E Munoz; J Sanchez-Rojas; F Dessenne; R Fauquembergue; J Thobel; G Zandler

doi:10.1007/978-94-009-1630-2_7

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HEMT models and simulations

Paolo Lugli, M Paciotti, E Calleja, E Munoz, J Sanchez-Rojas, F Dessenne, R Fauquembergue, J Thobel and G Zandler

Pseudomorphic HEMT Technology and Applications, pp.141-163

Springer

1996

DOI: https://doi.org/10.1007/978-94-009-1630-2_7

Handle:

https://hdl.handle.net/10863/9967

Abstract

Sensors

The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.

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Details

Title: HEMT models and simulations
Creators: Paolo Lugli
M Paciotti
E Calleja
E Munoz
J Sanchez-Rojas
F Dessenne
R Fauquembergue
J Thobel
G Zandler
Publication Details: Pseudomorphic HEMT Technology and Applications, pp.141-163
Editor(s): Ross RL, Svensson SP, Lugli P
ISBN: 978-94-010-7228-1
EISBN: 978-94-009-1630-2
Publisher: Springer
Dodrecht
Identifiers: 978-94-010-7228-1
(UNIBZ)22690393
991005773116301241
Scopus ID: n.a.
Academic Unit: Faculty of Science and Technology
Language: English
Resource Type: Book chapter
Author Names String: Lugli P, Paciotti M, Calleja E, Munoz E, Sanchez-Rojas J, Dessenne F, Fauquembergue R, Thobel J, Zandler G
Additional Description: srcEditors: Ross RL, Svensson SP, Lugli P

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