Now showing items 1-4 of 4

    • Electron-phonon scattering in molecular wires 

      Pecchia A; Gagliardi A; Carlo A; Frauenheim T; Lugli P (IEEE, 2004)
      In the present work we investigate the influence of molecular vibrations on the tunneling of electrons through a molecular wire, sandwiched in between two gold contacts. The molecular vibrations are treated quantum-mechanically ...
    • Full band approach to tunneling in MOS structures 

      Sacconi F; Di Carlo A; Lugli P; Städele M; Jancu J (2004)
      Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n -Si/SiO /p-Si capacitors with thicknesses between 0.7 ...
    • Full-band approaches for the quantum treatment of nanometer-scale MOS structures 

      Sacconi F; Povolotskyi M; Di Carlo A; Lugli P; Städele M; Strahberger C; Vogl P (2002)
      Using quantum mechanical methods that include the full-band structure, we study two quantum mechanical phenomena that occur in MOS transistors: ultrathin oxide tunneling and inversion layer quantization. We obtain good ...
    • Full-band approaches to the electronic properties of nanometer-scale MOS structures 

      Sacconi F; Povolotskyi M; Di Carlo A; Lugli P; Städele M (2004)
      Using quantum mechanical methods that include the full-band structure of Si and SiO, we study two non-classical phenomena that occur in MOS transistors at the nanometer-scale: tunneling through ultrathin oxides and quantum ...