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    • Full band approach to tunneling in MOS structures 

      Sacconi F; Di Carlo A; Lugli P; Städele M; Jancu J (2004)
      Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n -Si/SiO /p-Si capacitors with thicknesses between 0.7 ...