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  • 2-D finite-element modeling of ZnO schottky diodes with large ideality factors 

    Arcari M; Scarpa G; Lugli P; Tallarida G; Huby N; Guziewicz E; Krajewski T; Godlewski M (2012)
    In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I /I ratio and ideality factors considerably higher ...