Now showing items 1-2 of 2

  • HEMT models and simulations 

    Lugli P; Paciotti M; Calleja E; Munoz E; Sanchez-Rojas J; Dessenne F; Fauquembergue R; Thobel J; Zandler G (Springer, 1996)
    The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar ...
  • Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures 

    DiCarlo A; Pescetelli S; Paciotti M; Lugli P; Graf M (PERGAMON-ELSEVIER SCIENCE LTD, 1996)
    Optical properties and electronic states of semiconductor nanostructures are calculated by using tight-binding models which account for valence band mixing, strain and external applied potentials in a self-consistent ...